Zhi Jiang

Fundings

• The Process of GaN-on-diamond with Si-based nanolayer SAB technology

  10/01/2026
  101149632

• Novel two-dimensional silicon FET structures for biosensing applications

  11/15/2022
  ZD202014

  https://www.chinapostdoctor.org.cn/

• Development on Flexible Hybrid Electronics for Next Generation Sensing/Energy Harvesting Applications

  07/14/2022
  AM2020003

  https://www.macaoyouthscholars.org/

• Preparation and Channel Continuity of New Two-dimensional Material Paper-based Transistors

  07/06/2022
  2020M673179

  https://www.chinapostdoctor.org.cn

Publications

• Data-Driven Review and Machine Learning Prediction of Diamond Vacancy Center Synthesis

  Bradac, Carlo; Gonçalves, Gíl; Jiang, Zhi; Peres, Marco
  Advanced Intelligent Systems | 2026

  https://advanced.onlinelibrary.wiley.com/doi/10.1002/aisy.202501082

• Corrections to “Diamond-on-Si IGBT With Ultrahigh Breakdown Voltage and On-State Current”

  Chengchang Zhang; Enpu Wang; Guangyu Wang; Jiajia Du; Jun Ying; Yu Pang; Zhi Jiang
  IEEE Transactions on Electron Devices | 2024

  https://doi.org/10.1109/TED.2024.3494760

• Diamond-on-Si IGBT With Ultrahigh Breakdown Voltage and On-State Current

  Chengchang Zhang; Enpu Wang; Guangyu Wang; Jiajia Du; Jun Ying; Yu Pang; Zhi Jiang
  IEEE Transactions on Electron Devices | 2024

  https://doi.org/10.1109/TED.2024.3450436

• Scale-up synthesis of high-quality solid-state-processed CsCuX (X = Cl, Br, I) perovskite nanocrystal materials toward near-ultraviolet flexible electronic properties

  Denys Pustovyi; Hezhuang Liu; Jihua Zou; Svetlana Vitusevich; Yixuan Huang; Zhaoquan Xu; Zhi Jiang
  RSC Advances | 2023

  https://doi.org/10.1039/D2RA07100B

• Near-UV Phototransistors Based on an All-Inorganic Lead-Free Cs3Cu2I5/CuTCNQ Hierarchical Heterostructure

  Caihong Li; Desheng Liu; Hezhuang Liu; Jihua Zou; Yixuan Huang; Zhaoquan Xu; Zhi Jiang
  ACS Applied Materials & Interfaces | 2022

  https://doi.org/10.1021/acsami.2c09470

• Erratum: “Signature of p-type semiconductor features in paper-based back gate metal-organic framework thin-film transistors” [Appl. Phys. Lett. 117, 093303 (2020)]

  Caihong Li; Desheng Liu; Hezhuang Liu; Jiang Wu; Jihua Zou; Zhaoquan Xu; Zhi Jiang; Zhiming Wang
  Applied Physics Letters | 2020

  https://doi.org/10.1063/5.0029672

• All-inkjet-printed MoS2 field-effect transistors on paper for low-cost and flexible electronics

  Enrico Sowade; et al; Jin- Ju Chen; Long Chen; Reinhard R. Baumann; Yan Wang; Zhao- quan Xu; Zhi Jiang
  Applied Nanoscience | 2020

  https://doi.org/10.1007/s13204-020-01438-3

• All-inkjet-printed high-performance flexible MoS2 and MoS2-reduced graphene oxide field-effect transistors

  Enrico Sowade; et al; Jin-Ju Chen; Kuan Xiao; Reinhard R. Baumann; Yan Wang; Zhao-Quan Xu; Zhi Jiang
  Journal of Materials Science | 2020

  https://doi.org/10.1007/s10853-020-04891-1

• Signature of p-type semiconductor features in paper-based back gate metal-organic framework thin-film transistors

  Caihong Li; Desheng Liu; Hezhuang Liu; Jiang Wu; Jihua Zou; Zhaoquan Xu; Zhi Jiang; Zhiming Wang
  Applied Physics Letters | 2020

  https://doi.org/10.1063/5.0010929

• Impact of low/high-¿ spacer–source overlap on characteristics of tunnel dielectric based tunnel field-effect transistor

  Jiang, Zhi
  Journal of Central South University | 2017

  http://dx.doi.org/10.1007/s11771-017-3671-x

• Tunnel Dielectric Field-Effect Transistors with High Peak-to-Valley Current Ratio

  Jiang, Zhi
  Journal of Electronic Materials | 2017

  http://dx.doi.org/10.1007/s11664-016-5021-4

• Vertical-dual-source tunnel FETs with steeper subthreshold swing

  Jiang, Zhi
  Journal of Semiconductors | 2016

  http://dx.doi.org/10.1088/1674-4926/37/9/094003

• Dual sources U-shape gate tunnel FETs with high on-current and steep SS

  Jiang, Zhi
  2016

• Influence of trap-assisted tunneling on trap-assisted tunneling current in double gate tunnel field-effect transistor

  Jiang, Zhi
  Chinese Physics B | 2016

  http://dx.doi.org/10.1088/1674-1056/25/2/027701

• Potential-based threshold voltage and subthreshold swing models for junctionless double-gate metal-oxide-semiconductor field-effect transistor with dual-material gate

  Jiang, Z.; Li, C.; Liu, Y.; Wang, P.; Zhuang, Y.
  International Journal of Numerical Modelling: Electronic Networks, Devices and Fields | 2016

  http://www.scopus.com/inward/record.url?eid=2-s2.0-84957437621&partnerID=MN8TOARS

• Drain current model for double-gate tunnel field-effect transistor with hetero-gate-dielectric and source-pocket

  Jiang, Z.; Li, C.; Liu, Y.; Wang, P.; Zhuang, Y.
  Microelectronics Reliability | 2016

  http://www.scopus.com/inward/record.url?eid=2-s2.0-84968431733&partnerID=MN8TOARS

• Drive Current Enhancement in TFET by Dual Source Region

  Jiang, Zhi
  Journal of Electrical and Computer Engineering | 2015

  http://dx.doi.org/10.1155/2015/905718

• Impact of Interface Traps on Direct and Alternating Current in Tunneling Field-Effect Transistors

  Jiang, Zhi
  Journal of Electrical and Computer Engineering | 2015

  http://dx.doi.org/10.1155/2015/630178

• The hetero material gateand hetero-junction tunnel field-effect transistor with pocket

  Jiang, Zhi
  2014

• Analytical modeling for double-gate TFET with tri-material gate

  Jiang, Z.; Li, C.; Wang, P.; Zhuang, Y.
  2014

• Subthreshold behavior models for nanoscale junctionless double-gate MOSFETs with dual-material gate stack

  Jiang, Z.; Li, C.; Li, Y.; Wang, P.; Zhuang, Y.
  Japanese Journal of Applied Physics | 2014

  http://www.scopus.com/inward/record.url?eid=2-s2.0-84905968354&partnerID=MN8TOARS